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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 142, Issue 4, 1998, Pages 571-577

(p,p) non-Rutherford backscattering analysis of silicon carbide

(4) Dai, Zhongning a,c Soares, J C a Silva, M F a Chu, Virginia b

a CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

b INESC (Portugal)

c JAPAN ATOMIC ENERGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETHYLENE; HELIUM; METHANE; PARTICLE BEAMS; PROTONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; STOICHIOMETRY;

NON RUTHERFORD BACKSCATTERING; PROTON BEAMS;

SILICON CARBIDE;

EID: 0032137039 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00367-X Document Type: Article

Times cited : (1)

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