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Volumn 115, Issue 1-4, 1996, Pages 319-322

Measurements of the random and channeled stopping powers for He ions in InP

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON ENERGY LEVELS; HELIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SILICON;

ION CHANNELING; RANDOM ELECTRONIC STOPPING POWER;

IONS;

EID: 0030564603 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(96)00168-1 Document Type: Article

Times cited : (8)

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