GaAs/(GaAs)4(AlAs)2 quantum wire lasers grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 886-890

  Higashiwaki, Masataka ^a   Ikawa, Seiji ^b   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b KUBOTA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CURRENT DENSITY; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

ACTIVE REGIONS; THRESHOLD CURRENT DENSITIES;

MOLECULAR BEAM EPITAXY;

EID: 0032673282     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01492-4     Document Type: Article

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