Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 994-998

  Chen, Y ^a   Li, G H ^a   Zhang, W ^a   Zhu, Z M ^a   Han, H X ^a   Wang, Z P ^a   Zhou, W ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; MULTILAYERS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS;

SELF-ORDERING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0033908510     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00736-8     Document Type: Article

References (25)

1. Kash K., Worlock J.M., Sturge M.D., Grabbe P., Harbison J.P.et al. Appl. Phys. Lett. 53:1988;782.
2. Roukes M.L., Scherer A., Allen S.J. Jr., Craighead H.G.et al. Phys. Rev. Lett. 59:1987;3011.
3. Miller B.I., Shahar A., Koren U., Corvini P.I. Appl. Phys. Lett. 54:1989;188.
4. Cibert J., Petroff P.M., Dolan G.J., Pearton S.J.et al. Appl. Phys. Lett. 49:1986;1275.
5. Dua P., Cooper S.L., Chen A.C., Cheng K.Y. Appl. Phys. Lett. 69:1996;2261.
6. Nötzel R., Temmyo J., Tamamure T. Appl. Phys. Lett. 64:1994;3557.
7. Nötzel R., Temmyo J., Tamamure T. Science. 369:1994;131.
8. Ponchet A., Le Corre A., Haridon H.L'., Lambert B., Salaün S. Appl. Phys. Lett. 67:1995;1850.
9. Krapf P., Robach Y., Gendry M., Porte L. Phys. Rev. B. 55:1997;10229.
10. Krapf P., Robach Y., Gendry M., Porte L. J. Cryst. Growth. 181:1997;337.
11. Sasaki A. J. Cryst. Growth. 163:1996;143.
12. Nabetani Y., Ishnkawa T., Noda S., Sasaki A. J. Appl. Phys. 76:1994;347.
13. Vouilloz F., Oberli D.Y., Dupertuis M.-A., Gustafsson A., Reinhardt F., Kapon E. Phys. Rev. B. 57(19):1998;12378.
14. Li Shu-Shen, Jian-Bai-Xia Phys. Rev. B. 50(12):1994;8602.
15. Feng-Qi-Liu, Wang Zhang Guoet al. Phys. Lett. A. 249:1998;555.
16. Lubyshev D.I., González-Borrero P.P., Marega E.et al. Appl. Phys. Lett. 68:1996;205.
17. Hatami F., Ledentsov N.N., Ruvimov S.S.et al. Appl. Phys. Lett. 67:1995;656.
18. Gaskill D.K., Bottka N., Aina L., Mattingly M. Appl. Phys. Lett. 56:1990;1269.
19. Bastard G., Delalande C., Heynadier M.H., Frijlink P.M.et al. Phys. Rev. B. 29:1984;7042.
20. Xu Z.Y., Lu Z.D., Yang X.P.et al. Phys. Rev. B. 54:1994;11528.
21. Mukai Kohki, Ohtsuka Nobuyuki, Shoji Hajimeet al. Appl. Phys. Lett. 68:1996;3013.
22. Lee Hao, Yang Weidong, Sercel Peter C. Phys. Rev. B. 55:1997;9757.
23. Raymond S., Fafard S., Poole P.J., Leonard D.et al. Phys. Rev. B. 54:1996;11548.
24. Tsuchiya M., Gaines J.M., Yan R.H.et al. Appl. Phys. Lett. 62:1989;466.
25. Zheng W.H., Xia Jian-Bai, Cheah K.W. J. Phys. Condens. Matter 9:1997;5105.