Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 579-585

  Akabori, Masashi ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Lateral surface superlattice; Metalorganic vapor phase epitaxy; Multiatomic steps

Indexed keywords

ANISOTROPY; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES; TRANSCONDUCTANCE; TUNNEL JUNCTIONS;

LATERAL SURFACE SUPERLATTICE (LSSL); TWO-DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR GROWTH;

EID: 0032477189     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00596-X     Document Type: Article

References (10)

1. T. Fukui, H. Saito, Jpn. J. Appl. Phys. 29 (1990) L483.
2. S. Hara, J. Ishizaki, J. Motohisa, T. Fukui, H. Hasegawa, J. Crystal Growth 145 (1994) 692.
3. S. Hara, J. Motohisa, T. Fukui, H. Hasegawa, Jpn. J. Appl. Phys. 34 (1995) 4401.
4. S. Hara, J. Motohisa, T. Fukui, J. Crystal Growth 170 (1997) 579.
5. S. Hara, J. Motohisa, T. Fukui, Solid State Electron. 42 (1998) 1233.
6. J. Motohisa, M. Akabori, S. Hara, J. Ishizaki, K. Ohkuri, T. Fukui, Phisica B 227 (1996) 295.
7. M. Akabori, J. Motohisa, T. Irisawa, S. Hara, J. Ishizaki, T. Fukui, Jpn. J. Appl. Phys. 36 (1997) 1966.
8. K. Nakazato, T.J. Thornton, J. White, H. Ahmed, Appl. Phys. Lett. 61 (1992) 3145.
9. J. Ishizaki, K. Ohkuri, T. Fukui, Jpn. J. Appl. Phys. 35 (1996) 1280.
10. S. Kasai, K. Jinushi, H. Tomozawa, H. Hasegawa, Jpn. J. Appl. Phys. 36 (1997) 1678.