Nonlithographic nano-wire arrays: Fabrication, physics, and device applications

IEEE Transactions on Electron Devices

Volumn 43, Issue 10, 1996, Pages 1646-1658

  Routkevitch, Dmitri ^a   Tager, A A ^a   Haruyama, Junji ^a   Almawlawi, Diyaa ^a   Moskovits, Martin ^a   Xu, Jimmy M ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC RESISTANCE; ELECTRODEPOSITION; ELECTRON TUNNELING; INTEGRATED CIRCUIT LAYOUT; MAGNETIC VARIABLES MEASUREMENT; NANOTECHNOLOGY; RAMAN SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

ALUMINUM OXIDE; CONDUCTANCE OSCILLATIONS; INTERWIRE COUPLING; NANOWIRE ARRAYS; SINGLE ELECTRON TUNNELING (SET);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030271091     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.536810     Document Type: Article

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