Trap characterization in buried-gate n-channel 6H-SiC JFETs

IEEE Electron Device Letters

Volumn 22, Issue 9, 2001, Pages 432-434

  Meneghesso, Gaudenzio ^a,b,c   Chini, A ^b,c   Verzellesi, G ^a,c,d   Cavallini, A ^a,c,e   Canali, Claudio ^a,c,d   Zanoni, Enrico ^a,b,c  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c INFM   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^e UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

6H SiC; JFETs; Transconductance frequency dispersion; Traps characterization

Indexed keywords

TRANSCONDUCTANCE FREQUENCY DISPERSION; TRAPS CHARACTERIZATION; VACUUM SUBLIMATION EPITAXY;

ACTIVATION ENERGY; ELECTRIC BREAKDOWN; ELECTRON TRAPS; EPITAXIAL GROWTH; GATES (TRANSISTOR); HOLE TRAPS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; TRANSCONDUCTANCE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0035447779     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.944330     Document Type: Article

References (16)

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16. Evidence of interface trap creation by hot electrons in AlGaAs/GaAs HEMT's