Breakdown and low-temperature anomalous effects in 6H SiC JFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 695-698

  Meneghesso, Gaudenzio ^a   Bartolini, Antonio ^a   Verzellesi, Giovanni ^a   Cavallini, Anna ^a   Castaldini, Antonio ^a   Canali, Claudio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRAPS; IONIZATION OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE;

DEEP IMPURITY LEVELS; OFF-STATE GATE-DRAIN BREAKDOWN PHENOMENA; ON-STATE WEAK IONIZATION EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 0032272326     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)