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Volumn 46, Issue 1-3, 1997, Pages 291-295

Growth and investigation of the big area Lely-grown substrates

Author keywords

Lely methods; SiC crystals; Substrates

Indexed keywords

CRYSTAL GROWTH; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); SUBSTRATES; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

EID: 0031124312     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(96)01996-4     Document Type: Article
Times cited : (5)

References (12)
  • 1
    • 0001093831 scopus 로고
    • Darstellung von Einkristallen von Siliziumcarbid und Beherrrshing von Art und Mende der eingebeunten verunreininungen
    • J.A. Lely, Darstellung von Einkristallen von Siliziumcarbid und Beherrrshing von Art und Mende der eingebeunten verunreininungen. Ber. Dt. Keram. Ges., 55 (1955) 229-231.
    • (1955) Ber. Dt. Keram. Ges. , vol.55 , pp. 229-231
    • Lely, J.A.1
  • 2
    • 33847510976 scopus 로고
    • Investigation of growth processes of ingots of silicon carbide single crystals
    • Tairov, M. Yu and V.F. Tsvetkov, Investigation of growth processes of ingots of silicon carbide single crystals, J. Cryst. Growth, 43 (1978) 209-212.
    • (1978) J. Cryst. Growth , vol.43 , pp. 209-212
    • Tairov, M.Yu.1    Tsvetkov, V.F.2
  • 6
    • 0042746015 scopus 로고
    • Defects in semiconducting silicon carbide crystals
    • A.S. Tregubova and I.L. Shulpina, Defects in semiconducting silicon carbide crystals, Sov. Phys. Solid State V, 14 (9) (1972) 2670-2674.
    • (1972) Sov. Phys. Solid State V , vol.14 , Issue.9 , pp. 2670-2674
    • Tregubova, A.S.1    Shulpina, I.L.2
  • 8
    • 0026765291 scopus 로고
    • Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system
    • M.M. Anikin, A.A. Lebedev, S.N. Pyatko, A.M. Strel'chuk and A.L. Syrkin, Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system, Mater. Sci. Eng. V, B11 (1992) 113-115.
    • (1992) Mater. Sci. Eng. V , vol.B11 , pp. 113-115
    • Anikin, M.M.1    Lebedev, A.A.2    Pyatko, S.N.3    StreL'Chuk, A.M.4    Syrkin, A.L.5
  • 12
    • 0000935023 scopus 로고    scopus 로고
    • Growth and investigation of the 6H-SiC epitaxial layers obtained by CVD on LeIy grown substrates presented at E-MRS spring meeting, June 1996
    • V.V. Zelenin, A.A. Lebedev, S.M. Starobinets, V.E. Chelnokov, Growth and investigation of the 6H-SiC epitaxial layers obtained by CVD on LeIy grown substrates presented at E-MRS spring meeting, June 1996. Mat. Sci. and Eng. B, 46 (1997) 300-303.
    • (1997) Mat. Sci. and Eng. B , vol.46 , pp. 300-303
    • Zelenin, V.V.1    Lebedev, A.A.2    Starobinets, S.M.3    Chelnokov, V.E.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.