-
1
-
-
0001093831
-
Darstellung von Einkristallen von Siliziumcarbid und Beherrrshing von Art und Mende der eingebeunten verunreininungen
-
J.A. Lely, Darstellung von Einkristallen von Siliziumcarbid und Beherrrshing von Art und Mende der eingebeunten verunreininungen. Ber. Dt. Keram. Ges., 55 (1955) 229-231.
-
(1955)
Ber. Dt. Keram. Ges.
, vol.55
, pp. 229-231
-
-
Lely, J.A.1
-
2
-
-
33847510976
-
Investigation of growth processes of ingots of silicon carbide single crystals
-
Tairov, M. Yu and V.F. Tsvetkov, Investigation of growth processes of ingots of silicon carbide single crystals, J. Cryst. Growth, 43 (1978) 209-212.
-
(1978)
J. Cryst. Growth
, vol.43
, pp. 209-212
-
-
Tairov, M.Yu.1
Tsvetkov, V.F.2
-
3
-
-
0042244830
-
Some problems in growth of Silicon Carbide and epitaxial structures based on it
-
in Russian
-
A.A. Glagovskii, E.V. Granovskii, A.K. Drozdov, V.M. Efimov, G.Ja. Skrinnikova, B.V. Smirnov, M.G. Travadjian, M.P. Chertkov and V.A. Shevchenko. Some problems in growth of Silicon Carbide and epitaxial structures based on it, Proc. 2nd All-Union Conf. Wide band Semiconductors, Leningrad, 1980, pp. 226-240 (in Russian).
-
Proc. 2nd All-Union Conf. Wide Band Semiconductors, Leningrad, 1980
, pp. 226-240
-
-
Glagovskii, A.A.1
Granovskii, E.V.2
Drozdov, A.K.3
Efimov, V.M.4
Skrinnikova, G.Ja.5
Smirnov, B.V.6
Travadjian, M.G.7
Chertkov, M.P.8
Shevchenko, V.A.9
-
6
-
-
0042746015
-
Defects in semiconducting silicon carbide crystals
-
A.S. Tregubova and I.L. Shulpina, Defects in semiconducting silicon carbide crystals, Sov. Phys. Solid State V, 14 (9) (1972) 2670-2674.
-
(1972)
Sov. Phys. Solid State V
, vol.14
, Issue.9
, pp. 2670-2674
-
-
Tregubova, A.S.1
Shulpina, I.L.2
-
7
-
-
0042746016
-
-
A.N. Andreev, A.S. Tregubova, M.P. Shcheglov, V.P. Rastegaev, S.I. Dorozhkin and V.E. Chelnokov, Fiz. Tekhn. Poluprovodn., 29 (1995) 10.
-
(1995)
Fiz. Tekhn. Poluprovodn.
, vol.29
, pp. 10
-
-
Andreev, A.N.1
Tregubova, A.S.2
Shcheglov, M.P.3
Rastegaev, V.P.4
Dorozhkin, S.I.5
Chelnokov, V.E.6
-
8
-
-
0026765291
-
Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system
-
M.M. Anikin, A.A. Lebedev, S.N. Pyatko, A.M. Strel'chuk and A.L. Syrkin, Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system, Mater. Sci. Eng. V, B11 (1992) 113-115.
-
(1992)
Mater. Sci. Eng. V
, vol.B11
, pp. 113-115
-
-
Anikin, M.M.1
Lebedev, A.A.2
Pyatko, S.N.3
StreL'Chuk, A.M.4
Syrkin, A.L.5
-
9
-
-
0029179069
-
Power Silicon Carbide Devices based on Lely grown substrates
-
A.A. Lebedev, A.N. Andreev, M.M. Anikin, M.G. Rastegaeva, N.S. Savkina, A.M. Strel'chuk, A.L. Syrkin, A.S. Tregubova and V.E. Chelnokov, Power Silicon Carbide Devices based on Lely grown substrates, Proc Int. Symp. Power Sem. Devices and Ics, Yokohama, Japan, May 1995, pp. 90-95.
-
Proc Int. Symp. Power Sem. Devices and Ics, Yokohama, Japan, May 1995
, pp. 90-95
-
-
Lebedev, A.A.1
Andreev, A.N.2
Anikin, M.M.3
Rastegaeva, M.G.4
Savkina, N.S.5
StreL'Chuk, A.M.6
Syrkin, A.L.7
Tregubova, A.S.8
Chelnokov, V.E.9
-
11
-
-
0039866488
-
2000 V 6H-SiC pn junction diodes
-
Ch. 6
-
P.G. Neudeck, D.J. Larkin, C.S. Salupo, J.A. Powell and L.G. Matus, 2000 V 6H-SiC pn junction diodes, Inst. Phys. Conf. Ser. No 137: Ch. 6, (1994) pp. 475-478.
-
(1994)
Inst. Phys. Conf. Ser.
, vol.137
, pp. 475-478
-
-
Neudeck, P.G.1
Larkin, D.J.2
Salupo, C.S.3
Powell, J.A.4
Matus, L.G.5
-
12
-
-
0000935023
-
Growth and investigation of the 6H-SiC epitaxial layers obtained by CVD on LeIy grown substrates presented at E-MRS spring meeting, June 1996
-
V.V. Zelenin, A.A. Lebedev, S.M. Starobinets, V.E. Chelnokov, Growth and investigation of the 6H-SiC epitaxial layers obtained by CVD on LeIy grown substrates presented at E-MRS spring meeting, June 1996. Mat. Sci. and Eng. B, 46 (1997) 300-303.
-
(1997)
Mat. Sci. and Eng. B
, vol.46
, pp. 300-303
-
-
Zelenin, V.V.1
Lebedev, A.A.2
Starobinets, S.M.3
Chelnokov, V.E.4
|