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Volumn 80, Issue 2, 1996, Pages 1219-1225

High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000566595     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362922     Document Type: Article
Times cited : (34)

References (22)
  • 6
    • 85033845416 scopus 로고    scopus 로고
    • Cree Research Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713
    • Cree Research Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713.
  • 10
    • 0028741078 scopus 로고
    • Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter, Jr., G. Gildenblat, S. Nakamura. and R. J. Nemanich Materials Research Society, Pittsburgh, PA
    • S. Wang, M. Dudley, C. H. Carter, Jr., and H. S. Kong, in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter, Jr., G. Gildenblat, S. Nakamura. and R. J. Nemanich (Materials Research Society, Pittsburgh, PA, 1994), Mat. Res. Symp. Proc., Vol. 339, pp. 735-740.
    • (1994) Mat. Res. Symp. Proc. , vol.339 , pp. 735-740
    • Wang, S.1    Dudley, M.2    Carter Jr., C.H.3    Kong, H.S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.