Backside copper metallization of GaAs MESFETs

Electronics Letters

Volumn 36, Issue 15, 2000, Pages 1317-1318

  Chen, C Y ^a   Chang, E Y ^a   Chang, L ^a   Chen, S H ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; METALLIZING; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING;

BACKSIDE COPPER METALLIZATION;

MESFET DEVICES;

EID: 0034227907     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000917     Document Type: Article

References (5)

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2. KIM, DONG JOON, and KIM, YONG TAE: 'Nanostructured Ta-Si-N diffusion barriers for Cu metallization', J. Appl. Phys., 1997, 82, (10), pp. 4847-4851
3. WEBER, E.R.: 'Transition metals in silicon', Appl. Phys. A, 1983, 30, (1), pp. 1-22
4. WOHLBIER, P.M.: 'Diffusion and defect data', , 1975, 10, (1-4), pp. 89-91
5. KITTEL, C.: 'Introduction to solid state physics' (John Wiley & Sons, 1996), 7th edn., pp. 126, 160