A double lightly doped drain (d-ldd) structure h-mesfet for mmic applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 12 PART 2, 1997, Pages 2229-2233

  Yamane, Yasuro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Gaas; MESFET; Microwave amplifier; MMIC

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; HEURISTIC METHODS; MICROWAVE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

SHEET RESISTANCE;

MESFET DEVICES;

EID: 0031358486     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.643821     Document Type: Article

References (9)

1. 1-xAs lattice-matched (x = 1 and strained (x = 0.85) two-dimensional electron gas field-effec transistors," Semicond. Sci. Technol., vol. 6, pp. 103-107, 1991.
2. F. Hyuga et al, "Si-implanted InGaP/GaAs metal-semiconductor fiel effect transistor," Appl. Phys. Lett., vol. 60, pp. 1963-1965, 1992.
3. M. Takikawa et al, "Pseudomorphic n-InGaP/InGaAs/GaAs hig electron mobility transistor for low-noise amplifier," IEEE Electro Del\rmjnllvice Lett., vol. 14, pp. 406-408, Aug. 1993.
4. D. Geiger et al, "InGaP/InGaAs HFET with high current density an high cut-off frequencies," IEEE Electron Device Lett., vol. 16, pp 259-261, Jan. 1995.
5. S. Sugitani et ai, "Self-aligned InGaP/InGaAs/GaAs heterostructur MESFET technology for analog-digital hybrid type IC's," in 1994 GaA ICSymp. Dig., Philadelphia, PA, 1994, pp. 123-136.
6. K. Inoue et at., "Improvement of breakdown voltage in InGaP/InGaAs GaAs heterostructure MESFET's for MMIC's," in 1995 GaAs 1C Symp Dig., San Diego, CA, 1995, pp. 97-100.
7. N. Camilleri et al., "Monolithic 40 to 60 GHz LNA," in IEEE MTT- Dig., Dallas, TX, 1990, pp. 599-602, 1990.
8. C. L. Lau et al., "Millimeter wave monolithic IC's using directio implantation into GaAs LEG substrate," in GaAs 1C Symp. Dig., Ne Orleans, LA, 1990, pp. 73-77.
9. S. H. Wemple, W. C. Niehaus, H. M. Cox, J. V. DiLorenzo, and W. O Schlosser, "Control of gate-drain avalanche in GaAs MESFET's," IEE Trans. Electron Devices, vol. ED-27, pp. 1013-1018, June 1980.