An auto-gain control transimpedance amplifier with low noise and wide input dynamic range for 10-Gb/s optical communication systems

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 9, 2001, Pages 1303-1308

  Ikeda, H ^a   Ohshima, T ^a   Tsunotani, M ^a   Ichioka, T ^a   Kimura, T ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Low noise; Transimpedance amplifier; Wide dynamic range

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIT ERROR RATE; CURRENT DENSITY; GAIN CONTROL; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTODIODES;

TRANSIMPEDANCE AMPLIFIERS;

OPTICAL COMMUNICATION;

EID: 0035445558     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.944655     Document Type: Article

References (11)

1. Fully electrical 40-Gb/s TDM system prototype based on InP HEMT digital IC technologies
2. InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V
3. 20-40 Gb/s 0.2-μm GaAs HEMT chip set for optical data receiver
4. 20Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology
5. A 40-Gb/s preamplifier using AlGaAs/InGaAs HBT's with regrown base contacts
6. Modulatoe driver and photoreceiver for 20 Gb/s optic-fiber links
7. InP-InGaAS single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond
8. High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links
9. A low power electroabsorption modulator driver IC for 10 Gb/s optical transmitter
10. A 1.06 Gb/s-31dBm to 0dBm BiCMOS optical preamplifier featuring adaptive transimpedance
11. Improvement of 0.1 μm-gate InGaAs/AlGaAs HEMT performance by suppression of electro-chemical etching in deionized water