A 40-Gb/s Preamplifier Using AlGaAs/InGaAs HBT's with Regrown Base Contacts

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 2, 1999, Pages 143-147

  Suzuki, Yasuyuki ^a,b,c   Shimawaki, Hidenori ^a,d,e,f   Amamiya, Yasushi ^a,c,d,g   Nagano, Nobuo ^a,c,h   Yano, Hitoshi ^a,i   Honjo, Kazuhiko ^a,c,h,j  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c Optoelectronics High Frequency D   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITY OF MICHIGAN   (United States)

^f Optoelectronics High Frequency D   (Japan)

^g UNIVERSITY OF TOKYO   (Japan)

^h TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

ⁱ Optoelectronics Technology Research   (Japan)

^j UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

more..

Author keywords

Broad band amplifiers; Heterojunction bipolar transistors; Optical fiber communication

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT TRANSMISSION; OPTICAL FIBERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN;

OPTICAL TRANSMISSION SYSTEMS;

BROADBAND AMPLIFIERS;

EID: 0033078983     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.743756     Document Type: Article

References (7)

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