20-40 Gb/s 0.2-μm GaAs HEMT chip set for optical data receiver

IEEE Journal of Solid-State Circuits

Volumn 32, Issue 9, 1997, Pages 1384-1392

  Lang, Manfred ^b,c,d   Wang, Zhi Gong ^{a,b,c,e,f,g,h}   Lao, Zhihao ^a,b,c,f,i   Schlechtweg, Michael ^a,b   Thiede, Andreas ^b   Rieger Motzer, Michaela ^b   Sedler, Martin ^b   Bronner, Wolfgang ^b   Kaufel, Gudrun ^b   Köhler, Klaus ^b   Hülsmann, Axel ^b   Raynor, Brian ^b  

^a IEEE

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c Kaiser Radio Werke Kenzingen ^*

^d ITT Intermetall   (Germany)

^e NANJING INSTITUTE OF TECHNOLOGY   (China)

^f RUHR UNIVERSITY BOCHUM   (Germany)

^g TONGJI UNIVERSITY   (China)

^h SOUTHEAST UNIVERSITY   (China)

ⁱ SICHUAN UNIVERSITY   (China)

Author keywords

Clock recovery; Data decision; Demultiplexer; Limiting amplifier; Optical data receiver; Static frequency divider

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; DIGITAL COMMUNICATION SYSTEMS; FREQUENCY DIVIDING CIRCUITS; MULTIPLEXING EQUIPMENT; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL RECEIVERS;

CLOCK RECOVERY; DEMULTIPLEXERS; LIMITING AMPLIFIERS; OPTICAL DATA RECEIVERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031235480     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.628745     Document Type: Article

References (10)

1. K. Iwatsuki, K. Suzuki, S. Nishi, and M. Saruwatari, "40 Gbit/s optical soliton transmission over 65 km," Electron. Lett., vol. 28, pp. 1821-1822, 1992.
2. M. Möller, H.-M. Rein, A. Felder, J. Popp, and J. Böck, "50 Gbit/s time-division multiplexer in Si-bipolar technology," Electron. Lett., vol. 31, pp. 1431-1432, 1995.
3. V. Hurm, W. Benz, M. Berroth, W. Bronner, G. Kaufel, K. Köhler, M. Ludwig, E. Olander, B. Raynor, and J. Rosenzweig, "20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver," Electron. Lett., vol. 32, pp. 683-684, 1996.
4. Z.-G. Wang, V. Hurm, M. Lang, M. Berroth, M. Ludwig, T. Fink, K. Köhler, and B. Raynor, "10 Gbit/s monolithic optoelectronic integrated receiver with clock recovery, data decision, and 1 : 4 demultiplexer," in ESSCIRC'95, pp. 354-357.
5. A. Hülsmann, G. Kaufel, K. Köhler, B. Raynor, J. Schneider, and T. Jakobus, "E-Beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits," Jpn. J. Appl. Phys., vol. 29, no. 10, pp. 2317-2320, 1990.
6. Z. Lao, M. Berroth, V. Hurm, M. Rieger-Motzer, A. Thiede, W. Bronner, A. Hülsmann, and B. Raynor, "A monolithic 24.9 GHz limiting amplifier using 0.2 μm AlGaAs/GaAs/AlGaAs HEMT's," in Proc. GaAs IC Symp., 1996, pp. 211-216.
7. Z. G. Wang, A. Thiede, M. Rieger-Motzer, M. Sedler, T. Fink, A. Hülsmann, T. Jakobus, and B. Raynor, "60 Gbit/s low power parallel processing data decision IC using .2 μm AlGaAs/GaAs/AlGaAs quantum well HEMT's," submitted to Electron. Lett.
8. Z.-G. Wang, M. Berroth, A. Thiede, M. Rieger-Motzer, P. Hoffmann, A. Hülsmann, K. Köhler, B. Raynor, and J. Schneider, "10 and 20 Gb/s clock recovery GaAs IC with a 288° phase shifting function," Electron. Lett., vol. 32, pp. 1498-1499, 1996.
9. _, "Circuit techniques for 10 and 20 Gbit/s clock recovery using a fully-balanced narrowband regenerative frequency divider with 0.3 μm HEMT's," in Dig. 1996 IEEE ISSCC, pp. 204-205.
10. M. Lang, M. Berroth, M. Rieger-Motzer, A. Hülsmann, G. Kaufel, K. Köhler, and B. Raynor, "30 GHz static frequency divider using a 0.2 μm AlGaAs/GaAs/AlGaAs HEMT technology," Electron. Lett., vol. 24, pp. 2111-2112, 1996.