20Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology

Electronics Letters

Volumn 33, Issue 13, 1997, Pages 1136-1137

  Schmid, R ^a   Meister, T F ^b   Neuhauser M ^a,c   Felder, A ^b   Bogner, W ^b   Rest, M ^b   Rupeter, J ^a,c   Rein, H M ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b SIEMENS AG   (Germany)

^c MICRAM MICROELECTRONIC GMBH   (Germany)

Author keywords

Amplifiers; Integrated circuits; Silicon germanium bipolar integrated circuits

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIPOLAR INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT DENSITY; FIBER OPTICS; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; TIME DIVISION MULTIPLEXING;

SILICON GERMANIUM BIPOLAR INTEGRATED CIRCUITS; SOFTWARE PACKAGE SPICE; TRANSIMPEDANCE AMPLIFIERS;

MULTIPLEX RADIO TRANSMISSION;

EID: 0031170699     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970791     Document Type: Article

References (8)

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