Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 1844-1849

  Farahmand, Maziar ^a,b   Brennan, Kevin F ^a,c   Gebara, Edward ^c   Heo, Deukhyoun ^a,c   Suh, Young ^c   Laskar, Joy ^a,c  

^a IEEE   (United States)

^b Movaz Networks   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Breakdown in GaN; Impact ionization; RF breakdown

Indexed keywords

BREAKDOWN VOLTAGE; MONTE CARLO SIMULATOR; SIGNAL EXCITATION;

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; IMPACT IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS;

MESFET DEVICES;

EID: 0035445421     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944168     Document Type: Article

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