Waveform analysis of GaAs FET breakdown

45th ARFTG Conference Digest - Spring 1995

Volumn , Issue , 1995, Pages 139-142

  Tkachenko, Y A ^a   Bao, J W ^a   Wei, C J ^a   Hwang, J C M ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MESFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS;

BREAKDOWN CURRENTS; GAAS-FET; GATE VOLTAGES; HIGH FREQUENCY HF; HOT-ELECTRON DRIFT VELOCITY; TRANSIT TIME; WAVE FORMS;

IMPACT IONIZATION;

EID: 84897485020     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTG.1995.327118     Document Type: Conference Paper

References (6)

1. C. J. Wei, Y. A. Tkachenko and J. C. M. Hwang, "Non-invasive waveform probing for nonlinear network analysis, " in IEEE MTT-S Int'l Microwave Symp. Dig., June 1993, pp. 1347-1350.
2. Y. A. Tkachenko, Y. Lan, D. S. Whitefield, C. J. Wei, J. C. M. Hwang, L. Aucoin and S. Shanfield, "Hot electron induced degradation of power Ga As field-effect transistors, " in GaAs ICSymp. Proc., Oct. 1994.
3. Y. A. Tkachenko, C. J. Wei and J. C. M. Hwang, 'Numerical analysis of hot-electron effects in GaAs MESFETs, " submitted to SISDEP'95Int'l Con/., Sept. 1995.
4. Y. A. Tkachenko, Y. Lan, D. S. Whitefield, C. J. Wei, J. C. M. Hwang, L. Aucoin and S. Shanfield, "Gradual degradation under RF overdrive of power GaAs field-effect transistors, " in GaAs Reliability Workshop Program Abstracts, Oct. 1993.
5. Y. A. Tkachenko, C. J. Wei and J. C. M. Hwang, "Hot-electron-induced electro-luminescence of GaAs MESFETs, " to be published.
6. S. Sze, "Semiconductor devices physics and technology, " John Wiley & sons, 1985, p. 63.