The surface modification of Si(1 1 1) substrates with SiNx for the growth of high quality β-SiC epilayers

Journal of Crystal Growth

Volumn 197, Issue 4, 1999, Pages 841-848

  Kim, Kwang Chul ^a   Nahm, Kee Suk ^a   Suh, Eun Kyung ^a   Hwang, Yong Gyoo ^b  

^a Chonbuk National University   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

Crystalline; Nitridation; Surface modification; Voids; SiC growth

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; FILM GROWTH; NITRIDING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON NITRIDE; SILICON WAFERS; SINGLE CRYSTALS; SURFACE TREATMENT;

EPILAYERS;

SEMICONDUCTING FILMS;

EID: 0033097902     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)00942-7     Document Type: Article

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