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Volumn 16, Issue 3, 1998, Pages 1007-1011

Use of atomic force microscopy for analysis of high performance InGaAsP/InP semiconductor lasers with dry-etched facets

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EID: 0003061412     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590059     Document Type: Article
Times cited : (7)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.