Electronic defect levels in relaxed, epitaxial p-type Si1-xGex layers produced by MeV proton irradiation

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1180-1183

  Monakhov, E V ^a   Nylandsted Larsen, A ^a   Kringhoj P ^a  

^a AARHUS UNIVERSITY   (Denmark)

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[No Author keywords available]

Indexed keywords

EID: 3943077266     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365554     Document Type: Article

References (20)

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