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Volumn 69, Issue , 1999, Pages 43-52

Growth- and process-induced defects in SiGe-based heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ALLOYS;

EID: 0032664193     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (11)

References (42)
  • 9
    • 0345487728 scopus 로고    scopus 로고
    • PhD thesis, Linköping University, unpublished
    • H.H. Radamson, PhD thesis, Linköping University, 1996, unpublished
    • (1996)
    • Radamson, H.H.1
  • 30
    • 0001814315 scopus 로고
    • Lattice Defects in Semiconductors London
    • G.D. Watkins, in Lattice Defects in Semiconductors 1974 (Inst.Phys.Conf.Ser. 23. London, 1975) p.1
    • (1974) Inst.Phys.Conf.Ser. , vol.23 , pp. 1
    • Watkins, G.D.1
  • 33
    • 0007841621 scopus 로고
    • Radiation Damage and Defects in Semiconductors, edited by J.E.Whitehouse London and Bristol
    • A. Brelot, in Radiation Damage and Defects in Semiconductors, edited by J.E.Whitehouse (Inst.Phys.Conf.Ser. 16, London and Bristol 1973) p.191
    • (1973) Inst.Phys.Conf.Ser. , vol.16 , pp. 191
    • Brelot, A.1
  • 38
    • 0344625586 scopus 로고    scopus 로고
    • private communication
    • A. Mesli, private communication
    • Mesli, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.