Properties of the buried oxide layer in SIMOX structures

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 343-350

  Revesz, A G ^a   Hughes, H L ^b  

^a Revesz Associates   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SUBSTRATES; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS;

BURIED OXIDE LAYERS; BURIED OXIDE (BOX) LAYER; HOLE TRAPPING; SEPARATION BY IMPLANTED OXYGEN (SIMOX);

SEMICONDUCTOR DEVICE STRUCTURES; MOS DEVICES;

EID: 0031150268     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00077-4     Document Type: Article

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