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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 7, 2001, Pages 865-870

Epitaxial growth of CeO2 films on Si(100) substrate and its electrical properties

(8) Kang, Jin Feng a Liu, Xiao Yan a Wang, Wei a Yu, Ting a Han, Ru Qi a Lian, Gui Jun a Zhang, Zhao Hui a Xiong, Guang Cheng a

a PEKING UNIVERSITY (China)

Author keywords

CeO2 films; High K gate dielectric; Interface; Nitrided Si surface

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; SEMICONDUCTING FILMS;

CERIUM DIOXIDE FILM; HIGH K GATE DIELECTRIC; NITRIDED SILICON SURFACE; NITROGEN PLASMA BOMBARDMENT;

CERIUM COMPOUNDS;

EID: 0035410899 PISSN: 02534177 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.