Temperature dependence of exciton lifetimes in high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1581-1585

  Higashiwaki, Masataka ^a   Kuroyanagi, Kazuyoshi ^b   Fujita, Kazuhisa ^b   Egami, Norihumi ^b   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EXCITONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EXCITON LIFETIMES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032120973     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00075-6     Document Type: Article

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