Characterization of tensile strained Si1-yCy alloy grown by photo- and plasma chemical vapor deposition at very low temperature

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 7, 2001, Pages 4440-4444

  Abe, K ^a   Yagi, S ^a   Okabayashi, T ^a   Yamada, A ^a   Konagai, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Low temperature silicon epitaxy; Photo CVD; Plasma CVD; Si1 yCy alloy

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LATTICE EXPANSION;

SILICON ALLOYS;

EID: 0035388677     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4440     Document Type: Article

References (16)