Epitaxial growth of Si1-yCy film by low temperature chemical vapor deposition

Japanese journal of applied physics

Volumn 39, Issue 11 A, 2000, Pages

  Yagi, Syuhei ^a   Abe, Katsuya ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; PHOTOSENSITIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

PHOTOCHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0034318198     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1078     Document Type: Article

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