Growth mechanism during silicon epitaxy by photochemical vapor deposition at low temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3622-3627

  Abe, Katsuya ^a   Watahiki, Tatsuro ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; FREE RADICALS; HYDROGEN BONDS; MATHEMATICAL MODELS; REACTION KINETICS;

DANGLING BOND TERMINATION; PHOTOCHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 0032666401     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3622     Document Type: Article

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