Improvement in the quality of ZnSe epilayers grown on (001) GaAs by the low temperature growth of a thin ZnSe buffer layer

Journal of Crystal Growth

Volumn 226, Issue 1, 2001, Pages 13-18

  Zhang, X B ^a   Ha, K L ^a   Hark, S K ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Crystal morphology; Metalogranic vapor phase epitaxy; Semiconducting II VI materials; X ray diffraction

Indexed keywords

FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS;

EPILAYERS; EXCITONIC PHOTOLUMINESCENCE;

SEMICONDUCTING FILMS;

EID: 0035368708     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01271-4     Document Type: Article

References (18)