A high gain N-Well/Gate tied PMOSFET image sensor fabricated from a standard CMOS process

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1097-1102

  Zhang, W ^a   Chan, M ^a  

^a Celestry Design Technologies Inc   (United States)

Author keywords

Active pixel sensors; CMOS APS; CMOS sensor array; DTMOS; Gated BJT; Image sensor; Lateral BJT; Optical sensor

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; FABRICATION; GATES (TRANSISTOR); MOSFET DEVICES; OPTICAL SENSORS; PHOTODETECTORS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

ACTIVE PIXEL SENSORS; IMAGE SENSOR ARRAYS;

IMAGE SENSORS;

EID: 0035367079     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925233     Document Type: Article

References (13)

1. Camera on a chip
2. Active pixel sensors: Are CCD's dinosaurs?
3. Technology and device scaling considerations for CMOS imagers
4. CMOS image sensors: Electronic camera on a chip
5. Smart CMOS image sensor array
6. A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process
7. High-sensitivity SOI MOS photodetector with self-amplification
8. Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate
9. High gain gate/body tied NMOSFET photo-detector on SOI substrate for low power applications
10. A 256 × 256 CMOS differential passive pixel imager with FPN reduction techniques
11. Analytical modeling for the collector current in SOI gate-controlled hybrid transistor
12. A 128 × 128-pixel standard-CMOS image sensor with electronic shutter
13. Programmable CMOS current comparator for analogue VLSI neural networks utilizing identical small-di-mension MOS transistors