Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 913-915

  Yoshida, H ^a   Mozume, T ^a   Nishimura, T ^a   Wada, O ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS; ULTRAFAST PHENOMENA;

COUPLED DOUBLE QUANTUM WELLS (C DQW); INTERSUBBAND TRANSITIONS;

OPTICAL SWITCHES;

EID: 0032050151     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980605     Document Type: Article

References (5)

1. SMET, J.H., PENG, L.H., HIRAYAMA, Y., and FONSTAD, C.G.: 'Electron intersubband transitions to 0.8eV (1.55μm) in InGaAs/AlAs single quantum wells', Appl. Phys. Lett., 1994, 64, pp. 986-987
2. ASANO, T., NODA, S., ABE, T., and SASAKI, A.: 'Near-infrared intersubbnd transitions in InGaAs/AlAs quantum wells on GaAs substrate', Jpn. J. Appl. Phys., 1996, 35, pp. 1285-1291
3. SUNG, B., CHUI, H.C., FEJER, M.M., and HARRIS, J.S.: 'Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs', Electron. Lett., 1997, 33, pp. 818-820
4. YOSHIDA, H., TEZUKA, T., ASHIZAWA, Y., and NAKAMURA, M.: 'Enhancement of the quantum confined Stark effect and tunneling carrier sweep-out in GaAs/AlGaAs multiple asymmetric quantum well structures'. Tech. Dig. of CLEO/Pacific Rim '95, 1995, pp. 275-276
5. RIDLEY, B.K.: 'Hot carriers in semiconductor nanostructures: Physics and applications' SHAH, J. (Ed.) (Academic Press, San Diego, 1992)