Observation of direct (type-I) transitions in type-II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1586-1589

  Mozume, Teruo ^a   Georgiev, Nikolai ^a   Yoshida, Haruhiko ^a   Neogi, Arup ^a   Nishimura, Tetsuya ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL LATTICES; ELECTRIC EXCITATION; ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; THICK FILMS;

ALUMINUM ARSENIC ANTIMONIDE; LATTICE MATCHING;

HETEROJUNCTIONS;

EID: 0034187343     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591432     Document Type: Article

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