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Volumn 16, Issue 5, 2001, Pages 1363-1371
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Optimization of the annealing process for the (Ba, Sr)TiO3 thin films grown by low-temperature (420 °C) metalorganic chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
BARIUM COMPOUNDS;
CRYSTAL IMPURITIES;
CURRENT DENSITY;
ELECTRODES;
FILM GROWTH;
LEAKAGE CURRENTS;
LOW TEMPERATURE EFFECTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTIMIZATION;
PERMITTIVITY;
RANDOM ACCESS STORAGE;
SPUTTERING;
ELECTRODE SPUTTERING;
THIN FILMS;
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EID: 0035352098
PISSN: 08842914
EISSN: None
Source Type: Journal
DOI: 10.1557/JMR.2001.0191 Document Type: Article |
Times cited : (9)
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References (17)
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