Analysis of aluminum ion implantation damage into 6H-SiC epilayers

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 733-736

  Mestres, N ^a   El Mekki, M Ben ^a   Campos, F J ^a   Pascual, J ^a   Morvan, E ^a   Godignon, P ^a   Millan J ^a   Lulli, G ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b CNR   (Italy)

Author keywords

Ion implantation; Raman; RBS; SIMS; Simulation

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; CRYSTAL IMPURITIES; ION IMPLANTATION; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

HIGH ENERGY IMPLANTATION;

SILICON CARBIDE;

EID: 4243713170     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (5)

1. M.V. Rao et al., Journal of Electronic Materials, vol.25, no1, 1996.
2. E. Morvan et al., Materials Science and Engineering, B46 (1997), pp. 218-222.
3. T. Kimoto et al., J. Electron. Mater. 24 (1995), p. 235.
4. A. Pérez-Rodríguez et al., J. Electron. Mater. 25 (1996), p. 541.
5. A. Chehaidar et al., J. Non-Cryst. Solids 169 (1994), p. 37.