Dwell-time dependence of irradiation damage in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 165-169

  Bischoff, L ^a   Teichert, J ^a   Hausmann, S ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Annealing; Current density; Damage; Dwell time; Focused ion beam

Indexed keywords

ANNEALING; COBALT; CRYSTALLINE MATERIALS; CURRENT DENSITY; FOCUSING; ION BOMBARDMENT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING;

DWELL-TIME DEPENDENCE; MICRO-RAMAN SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0035335170     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00506-1     Document Type: Conference Paper

References (18)