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Volumn 30, Issue 5, 2001, Pages 477-481
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1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis
a
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Author keywords
Diode laser; Molecular beam epitaxy; Nitrogen; Quantum dots
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Indexed keywords
ELECTRIC CURRENTS;
MODAL ANALYSIS;
MOLECULAR BEAM EPITAXY;
NITROGEN;
QUANTUM EFFICIENCY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
THERMODYNAMIC STABILITY;
INDIUM ARSENIDE QUANTUM DOTS;
INDIUM GALLIUM ARSENIDE QUANTUM DOTS;
QUANTUM DOT LASERS;
THRESHOLD CURRENT;
QUANTUM WELL LASERS;
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EID: 0035331433
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-001-0086-z Document Type: Article |
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Times cited : (11)
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References (8)
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