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Volumn , Issue , 1996, Pages 614-617
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Dependence of critical thickness of strained InAs layer on growth rate
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
FILM GROWTH;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
STRAIN;
SUBSTRATES;
THERMAL EFFECTS;
THICKNESS MEASUREMENT;
CRITICAL THICKNESS;
SEMICONDUCTING FILMS;
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EID: 0029705768
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (5)
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References (6)
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