InP-based high-performance monostable-bistable transition logic element (MOBILE): An intelligent logic gate featuring weighted-sum threshold operations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1172-1177

  Chen, Kevin J ^a,b   Maezawa, Koichi ^a   Yamamoto, Masafumi ^a  

^a NTT CORPORATION   (Japan)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

HEMT; InP; Monolithic integration; Resonant tunneling diode; Weighted sum threshold operation

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FABRICATION; HIGH ELECTRON MOBILITY TRANSISTORS; LOGIC GATES; NEGATIVE RESISTANCE; TRANSCONDUCTANCE; TUNNEL DIODES;

MONOLITHIC INTEGRATION; MONOSTABLE BISTABLE TRANSITION LOGIC ELEMENTS; NEGATIVE DIFFERENTIAL RESISTANCE; PEAK TO VALLEY RATIO; RESONANT TUNNELING DIODES; WEIGHTED SUM THRESHOLD OPERATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030078872     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1172     Document Type: Article

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