Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2694, Issue , 1996, Pages 126-136

  Moise, Theodore S ^a   Kao, Yung C ^a   Celii, F G ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURENT-VOLTAGE CHARACTERISTICS; LATTICE MISMATCH; RESONANT TUNNELING DIODES;

ELECTRIC PROPERTIES; HETEROJUNCTIONS; RELAXATION PROCESSES; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

TUNNEL DIODES;

EID: 0029699120     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)