Monitoring Ga and In desorption and In surface segregation during MBE using atomic absorption

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 244-249

  Jackson, Andrew ^a   Pinsukanjana, Paul ^a   Coldren, Larry ^a   Gossard, Arthur ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMS; DESORPTION; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

ATOMIC ABSORPTION SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0031144951     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01232-8     Document Type: Article

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