Mechanically controllable break junctions with quasi-planar electrodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 807-811

  Kolesnychenko, O Y ^a   Jurdik, E ^a   Shklyarevskii, O I ^a,b   Van Kempen, H ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON TUNNELING; POINT CONTACTS; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS; ULTRAHIGH VACUUM;

FIELD EMISSION RESONANCE (FER);

SURFACE TREATMENT;

EID: 0035326215     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1373637     Document Type: Conference Paper

References (26)

1. J. Moreland and J. W. Ekin, J. Appl. Phys. 58, 3888 (1985).
2. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Jongh, Physica C 191, 485 (1992).
3. J. M. van Ruitenbeek, A. Alvarez, I. Pineyro, C. Grahmann, P. Joyez, M. H. Devoret, D. Esteve, and C. Urbina, Rev. Sci. Instrum. 67, 108 (1996).
4. C. Zhou, C. J. Muller, M. R. Deshpande, J. W. Sleight, and M. A. Reed, Appl. Phys. Lett. 67, 1160 (1995).
5. R. J. P. Keijsers, O. I. Shklyarevskii, J. G. H. Hermsen, and H. van Kempen, Rev. Sci. Instrum. 67, 2863 (1996).
6. O. Y. Kolesnychenko, O. I. Shklyarevskii, and H. van Kempen, Rev. Sci. Instrum. 70, 1442 (1999).
7. B. Ludoph, D. Esteve, C. Urbina, M. H. Devoret, and J. M. van Ruitenbeek, Phys. Rev. Lett. 82, 1530 (1999).
8. H. E. van den Brom and J. M. van Ruitenbeek, Phys. Rev. Lett. 82, 1526 (1999).
9. R. J. P. Keijsers, O. I. Shklyarevskii, and H. van Kempen, Phys. Rev. B 61, 7328 (2000).
10. O. Y. Kolesnychenko, O. I. Shklyarevskii, and H. van Kempen, Phys. Rev. Lett. 83, 2242 (1999).
11. U. Staufer, in Scanning Tunneling Microscopy II, Chap. 8, edited by R. Wiesendanger and H.-J. Güntherodt, Springer Series in Surface Science, Vol. 28 (Springer, Berlin, 1992).
12. R. Kóning, O. Jusko, L. Koenders, and A. Schlachetzki, J. Vac. Sci. Technol. B 14, 48 (1996).
13. T. M. Mayer, J. E. Houston, G. E. Franlin, A. A. Erchak, and T. A. Michalske, J. Appl. Phys. 85, 8170 (1999).
14. U. Staufer, R. Wiesendanger, L. Eng, L. Rosenthaler, H.-R. Hider, H.-J. Güntherodt, and N. Garcia, J. Vac. Sci. Technol. A 6, 537 (1988).
15. U. Memmert, U. Hodel, and U. Hartmann, J. Vac. Sci. Technol. B 15, 1364 (1997).
16. I. K. Yanson and O. I. Shklyarevskii, Sov. J. Low Temp. Phys. 12, 509 (1986).
17. H. Oshima and K. Miyano, Phys. Rev. Lett. 73, 2203 (1994).
18. J. M. Pitarke, F. Flores, and P. M. Echenique, Surf. Sci. 234, 1 (1990).
19. T. M. Mayer, D. P. Adams, and B. M. Marder, J. Vac. Sei. Technol. B 14, 2438 (1996).
20. B. N. J. Persson and J. E. Demuth, Solid State Commun. 57, 769 (1986).
21. F. Flores, P. M. Echenique, and R. H. Ritchie, Phys. Rev. B 34, 2899 (1986).
22. B. I. Verkin, I. K. Yanson, I. O. Kulik, O. I. Shklyarevskii, A. A. Lysykh, and Y. G. Naydyuk, Solid State Commun. 30, 215 (1979).
23. W. Müller-Hirsh, A. Kraft, M. T. Hirsh, J. Parisi, and A. Kittel, J. Vac. Sci. Technol. A 17, 1205 (1999).
24. T. Tsong, Phys. Rev. B 44, 13703 (1991).
25. J. Méndez, J. Gómez-Herrero, J. I. Pascual, J. J. Sáenz, J. M. Soler, and A. M. Baro, J. Vac. Sci. Technol. B 14, 1145 (1996).
26. D. Huang, F. Yamaguchi, and Y. Yamamoto, Jpn. J. Appl. Phys., Part 1 37, 3824 (1998).