Field emission characteristics of the scanning tunneling microscope for nanolithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2438-2444

  Mayer, T M ^a   Adams, D P ^a   Marder, B M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CURRENT DENSITY; DIELECTRIC FILMS; ELECTRIC FIELDS; ELECTRON BEAM LITHOGRAPHY; ELECTRON EMISSION; LAPLACE TRANSFORMS; NANOTECHNOLOGY; VOLTAGE MEASUREMENT;

BEAM DIAMETER; BIAS VOLTAGE; FIELD EMISSION; FOWLER-NORDHEIM EQUATION; SCANNING TUNNELING MICROSCOPES; TIP STRUCTURES; WORK FUNCTION;

SCANNING TUNNELING MICROSCOPY;

EID: 0030193348     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588751     Document Type: Article

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