Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2181-2185

  Chong, Pei Fen ^a   Cho, Byung Jin ^a   Chor, Eng Fong ^a   Joo, Moon Sig ^b   Yeo, In Seok ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Electron beam irradiation; Electron beam lithography; Interface states; Quasi breakdown; Radiation induced leakage current; Stress induced leakage current

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON IRRADIATION; ELECTRON TRAPS; GATES (TRANSISTOR); LEAKAGE CURRENTS;

ELECTRICAL STRESS; EQUIVALENT CHARGE FLUENCE; INTERFACE STATES; OXIDE BULK TRAPS; QUASI BREAKDOWN; ULTRATHIN GATE OXIDES;

OXIDES;

EID: 0033727206     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2181     Document Type: Article

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