Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 175-181

  Wohl G ^a   Dudek, V ^b   Graf, M ^b   Kibbel, H ^c   Herzog, H J ^c   Klose, M ^d  

^a UNIVERSITY OF STUTTGART   (Germany)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

^c DAIMLER AG   (Germany)

^d GERMAN AEROSPACE CENTER DLR   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOSFET DEVICES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY;

DIFFERENTIAL MOLECULAR BEAM EPITAXY; MICRO-RAMAN SPECTROSCOPY; SEMICONDUCTOR BUFFER LAYERS;

SEMICONDUCTING FILMS;

EID: 0343006803     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00801-4     Document Type: Article

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