Thickness dependent surface morphologies and luminescent properties of ZnSe epilayers grown on (0 0 1) GaAs by metalorganic chemical vapor phase deposition

Journal of Crystal Growth

Volumn 223, Issue 4, 2001, Pages 528-534

  Zhang, X B ^a   Ha, K L ^a   Hark, S K ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; X RAY SPECTROSCOPY;

ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035277155     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00723-0     Document Type: Article

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