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Volumn 197, Issue 3, 1999, Pages 507-512

Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy

(7) Liu, Q a Lakner, H a Taudt, W b Heuken, M c Mendorf, C a Heime, K b Kubalek, E a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

b RWTH AACHEN UNIVERSITY (Germany)

c AIXTRON AG (Germany)

Author keywords

AFM; MOVPE; Polycrystalline islands; SEM; ZnSe GaAs heterostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

SCANNING TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDE;

HETEROJUNCTIONS;

EID: 0033514216 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00802-1 Document Type: Article

Times cited : (8)

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