Numerical analysis of the pressure dependence of the etch rate in an Al etching reactor equipped with a helicon source

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 159-163

  Ikeda, Kei ^a   Oshita, Yoshio ^b  

^a ANELVA Corporation ^*  (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005013412     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589772     Document Type: Article

References (12)

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