TiN etching and its effects on tungsten etching in SF6/Ar helicon plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 A, 1998, Pages 801-806

  Choi, Chang Ju ^a   Seol, Yeo Song ^a   Baik, Ki Ho ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Helicon plasma; Optical emission spectroscopy; Secondary ion mass spectrometry; SF6 Ar plasma; TIN etching; Titanium fluoride; Tungsten

Indexed keywords

EMISSION SPECTROSCOPY; HELICONS; PLASMA ETCHING; SECONDARY ION MASS SPECTROMETRY; TITANIUM NITRIDE; TUNGSTEN;

TITANIUM FLUORIDE;

SEMICONDUCTING FILMS;

EID: 0032025324     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.801     Document Type: Article

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