Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1896-1898

  Kato, Tomonobu ^a   Honda, Yoshio ^a   Kawaguchi, Yasutoshi ^a   Yamaguchi, Masahito ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

AlGaN; GaN; MOVPE; Quantum well; Quantum wire; Selective growth

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

CATHODE LUMINESCENCE (CL);

MICROSTRUCTURE;

EID: 0035267303     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1896     Document Type: Article

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