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Volumn 16, Issue 2, 2001, Pages 413-416

Modeling of the effects of crystallographic orientation on electromigration-limited reliability of interconnects with bamboo grain structures

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; CURRENT DENSITY; DIFFUSION; ELECTROMIGRATION; GRAIN BOUNDARIES; INTERFACES (MATERIALS);

EID: 0035262021     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2001.0062     Document Type: Article
Times cited : (7)

References (26)
  • 12
    • 0009190760 scopus 로고
    • edited by J.S. Koehler, F. Seitz, W.T. Read, Jr., and E. Orawan, Institute of Metals, Institute of Metals Division, American Institute of Mining and Metallurgical Engineers, NY, Chap. 2
    • (1954) Dislocations in Metals , pp. 37
    • Read W.T., Jr.1    Shockley, W.2
  • 26
    • 0031359024 scopus 로고    scopus 로고
    • Materials Reliability in Microelectronics VII, edited by J.J. Clement, R.R. Keller, K.S. Krisch, J.E. Sanchez, Jr., and Z. Suo (Pittsburgh, PA)
    • (1997) Mater. Res. Soc. Symp. Proc. , vol.473 , pp. 305-315
    • Thouless, M.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.